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Research

Our group focuses on developing novel electronic devices for THz frequencies, low power logic and memory applications and power electronics applications. Our research spans from fundamental materials and interface characterization to innovative nanoscale device structure fabrication to modeling of devices and studying fundamental electron transport mechanism in these devices. For THz devices, we are exploring innovative device structures in novel III-N materials systems. Another on-going project in our group is focused on developing non-charge based logic devices for a post-CMOS scenario. The project is a part of a multi-university research center, Antiferromagnetic Magneto-electric Memory and Logic (AMML), co-funded by the National Science foundation (NSF) and Semiconductor Research Corporation (SRC). We are also investigating emerging ultrawidebandgap (UWB) semiconductors (Ga2O3) for next generation power electronics applications. Our group was the first to demonstrate high breakdown enhancement-mode devices in Ga2O3 which was presented at the Device Research Conference 2016. Prior to the current research at UB, the PI worked on III-V MOSFETs for post-Si CMOS logic devices and on high frequency GaN devices at UCSB. Please go through the group publications to get an idea about the scope of the work.

Call for papers

International Journal of Highspeed Electronics and Systems Special Issue on Widebandgap Semiconductors: IJHSES Special Issue . Submission deadline: June 22nd, 2019.

Publications

The publications below are provided for personal use only and on a non-commercial basis. The copyrights are with the respective publishers.

Google Scholar citation report: Google Scholar: Uttam Singisetti

Journal Publications

  1. "A field-plated Ga2O3 MOSFET with near 2-kV breakdown voltage and 520 mOhm-cm2 on-resistance", Ke Zeng, Abhishek Vaidya and Uttam Singisetti , Applied Physics Express, vol. 12(8): 081003, July 2019. DOI: https://doi.org/10.7567/1882-0786/ab2e86
  2. "Space-charge limited conduction in epitaxial chromia films grown on elemental and oxide-based metallic substrates", C.-P. Kwan, M. Street, A. Mahmood, W. Echtenkamp, M. Randle, K. He, J. Nathawat, N. Arabchigavkani, B. Barut, S. Yin, R. Dixit, U. Singisetti, Ch. Binek, and J. P. Bird, AIP Advances 9(5): 055018, 2019. DOI: https://doi.org/10.1063/1.5087832
  3. "Characterization and Modeling of Co/BaTiO3/SrRuO3 Ferroelectric Tunnel Junction Memory by Capacitance-voltage (C-V), Current-voltage (I-V) and High-frequency Measurements", M. Abuwasib, H. Lee, J-W. Lee, C-B. Eom, A. Gruverman and U. Singisetti. IEEE Transactions on Electron Devices, vol. 66, no. 5, pp. 2186-2191, May 2019. DOI: 10.1109/TED.2019.2904019 [PDF]
  4. "Flexible beta-Ga2O3 Nanomembrane Schottky Barrier Diodes",E. Swinnich, M. N. Hasan, K. Zeng, Y. Dove, U. Singisetti, B. Mazumder, and, J.-H. Seo, Advancel electronic Materials, Accepted for publication, 2019. [PDF] DOI: 10.1002/aelm.201800714
  5. "Gate-Controlled Metal-Insulator Transition in TiS3 Nanowire Field-Effect Transistors", M. Randle, A. Lipatov, A. Kumar, C.-P. Kwan, J. Nathawat, B.Barut, S. Yin, K. He, N. Arabchigavkani, R. Dixit, T. Komesu, J. Avila, M. C. Asensio, P. A. Dowben, A. Sinitskii, U. Singisetti, and J. P. Bird, ACS Nano, 13 (1), pp 803-811, 2019. [PDF] DOI: 10.1021/acsnano.8b08260
  6. "Assessment of phonon scattering-related mobility in β-Ga2O3", A. Parisini, K. Ghosh, U. Singisetti, and R Fornari, Semiconductor Science and Technology 33(10), 105008 (2018). [PDF] DOI: 10.1088/1361-6641/aad5cd
  7. "Impact Ionization in β-Ga2O3", K. Ghosh, and U. Singisetti, Journal of Applied Physics, 124 (8), (2018). [PDF] DOI: 10.1063/1.5034120
  8. "1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs", K. Zeng, A. Vaidya, and U. Singisetti, IEEE Electron Device Letters, vol. 39, no. 9,pp. 1385-1388, 2018. [PDF] DOI: 10.1109/LED.2018.2859049
  9. "Towards a Strong Spin Orbit Coupling Magnetoelectric Transistor", P. A. Dowben, C. Binek, K. Zhang, L. Wang, W. N. Mei, J. P. Bird, U. Singisetti, X. Hong, K. L. Wang, and D. Nikonov, IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, vol 4, pp. 1-9, 2018. [PDF] DOI: 10.1109/JXCDC.2018.2809640
  10. "Interface characterization of atomic layer deposited high-k on non-polar GaN", Y. Jia, K. Zeng, and U. Singisetti, Journal of Applied Physics, 122, 154104 (2017). [PDF] DOI: 10.1063/1.4986215.
  11. "Electron Mobility in Monoclinic β-Ga2O3 - Effect of Plasmon-phonon Coupling, Anisotropy, and Confinement", K. Ghosh, and U. Singisetti, Journal of Materials Research 32 (22), 4142 (2017). [PDF] DOI: 10.1557/jmr.2017.398
  12. "Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga2O3, and diamond", M.Kim, J.-H. Seo, U.Singisetti, and Z. Ma, Journal of Materials Chemistry C 5(33): 8338-8354, (2017). [PDF] DOI: 10.1039/C7TC02221B
  13. "Temperature Dependent Quasi-static Capacitance-Voltage Characterization of SiO2/β-Ga2O3", K. Zeng, and U. Singisetti, Applied Physics Letters, 111, 122108, (2017). [PDF] DOI: 10.1063/1.4991400
  14. "Negative Differential Conductance & Hot-Carrier Avalanching in Monolayer WS2 FETs."G. He, J. Nathawat, C.-P. Kwan, H. Ramamoorthy, R. Somphonsane, M. Zhao, U. Singisetti, K. Ghosh, M. Terrones, R. Vajtai, P. M. Ajayan, D. K. Ferry and J. P. Bird,Scientific Reports 7(1): 11256, (2017). [PDF] DOI:10.1038/s41598-017-11647-6.
  15. "Ab initio velocity-field curves in monoclinic β-Ga2O3", K. Ghosh, and U. Singisetti, Journal of Applied Physics, 122, 035702, 2017. [PDF] DOI: http://dx.doi.org/10.1063/1.4986174
  16. "Sub-100 nm Integrated Ferroelectric Tunnel Junction Devices using Hydrogen Silsesquioxane Planarization", M. Abuwasib, J. Lee, H. Lee, C.-B. Eom, A. Gruverman, and U. Singisetti, Journal of Vacuum Science & Technology B, vol. 32, no.2, 021803, 2017. DOI:http://dx.doi.org/10.1116/1.4978519 [PDF]
  17. "Ga2O3 MOSFETs using Spin-on-Glass Source/Drain Doping Technology", K. Zeng, J. Wallace, C. Heimburger, K. Sasaki, A. Kuramata, T. Masui, J. Gardella, and U. Singisetti, IEEE Electron Device Letters, vol. 38, no. 4,pp. 513-516, 2017. DOI:10.1109/LED.2017.2675544 [PDF]
  18. "Interface characterization of atomic layer deposited Al2O3 on m-plane GaN", Y. Jia, J. Wallace, E. Echeverria, J. A. Gardella Jr, A. M. Dabiran and U. Singisetti , Phys. Status Solidi B, 1600681, 2017. DOI:10.1002/pssb.201600681 [PDF]
  19. "Ab-initio calculation of electron-phonon coupling in monoclinic β-Ga2O3 crystals", K. Ghosh, and U. Singisetti, Applied Physics Letters, 109, 072102, 2016. [PDF]
  20. "Interface State Density in Atomic Layer Deposited SiO2/β-Ga2O3 (201) MOSCAPs", K. Zeng, Y. Jia, and U. Singisetti, IEEE Electron Device Letters, vol. 37, no. 7, pp. 906-909, July 2016. [PDF] DOI: 10.1109/LED.2016.2570521
  21. "Scaling of Electroresistance Effect in Fully Integrated Ferroelectric Tunnel Junctions", M. Abuwasib, H. Lu, T. Li, P. Buragohain, H. Lee, C.-B. Eom, A. Gruverman and U. Singisetti, Applied Physics Letters, 108, 152904, (2016). [PDF]
  22. "Band Offset Characterization of the Atomic Layer Deposited Aluminum Oxide on m-plane Indium Nitride", Y. Jia, J. Wallace, J. A. Gardella Jr, A. M. Dabiran and U. Singisetti, Journal of Electronic Materials, 45 (4), pp 2013-2018, (2016). [PDF]
  23. "Electrical characterization of atomic layer deposited Al2O3/InN Interfaces", Y. Jia, A. M. Dabiran and U. Singisetti, Journal of Vacuum Science & Technology A, 34, 01A133 (2016). [PDF ]
  24. "Contact resistance to SrRuO3 and La0.67Sr0.33MnO3 epitaxial films", M. Abuwasib, H. Lee, C.-B. Eom, A. Gruverman and U. Singisetti,Applied Physics Letters, 107 (24), 242905,(2015). [PDF]
  25. "Thermoelectric Transport Coefficients in Mono-layer MoS2 and WSe2: Role of Substrate, Interface Phonons, Plasmon, and Dynamic Screening", K. Ghosh, and U. Singisetti, Journal of Applied Physics, 118 (14), 135711, (2015). [PDF ]
  26. "Atomic Layer Deposition of Hafnium(IV) Oxide on Graphene Oxide: Probing Interfacial Chemistry and Nucleation by using X-ray Absorption and Photoelectron Spectroscopies", T. E. G. Alivio, L. R. De Jesus, R. V. Dennis, Y. Jia, C. Jaye, D. A. Fischer, U. Singisetti, S. Banerjee, ChemPhysChem, 16 (13), 2842-2848, 2015. DOI: 10.1002/cphc.201500434. [PDF]
  27. "Conduction Mechanisms in CVD-Grown Monolayer MoS2 Transistors: From Variable-Range Hopping to Velocity Saturation", G. He, K. Ghosh, U. Singisetti, H. Ramamoorthy, R. Somphonsane, G. Bohra, S. Najmaei, R. Vajtai, P. M. Ajayan, and J. P. Bird, Nano Letters, 15 (8), 5052-5058, 2015. DOI: 10.1021/acs.nanolett.5b01159. [PDF]
  28. "Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 (201)", Y. Jia, K. Zeng, J. S. Wallace, J. A. Gardella, and U. Singisetti, Applied Physics Letters, 106, 102107 (2015). [PDF]
  29. "Electric-field dependent conduction mechanisms in crystalline chromia", C.-P.Kwan, R. Chen, U. Singisetti, and J.P. Bird, Applied Physics Letters, 106, 112901 (2015). [PDF ]
  30. "Control of InGaAs and InAs facets using metal modulation epitaxy", M.A. Wistey, A. K. Baraskar, U. Singisetti, G. J. Burek, B. Shin, E. Kim, P. C. McIntyre, A. C. Gossard, M. J. W. Rodwell, Journal of Vacuum Science & Technology B, 33, 011208 (2015). [PDF]
  31. "Rode's iterative calculation of surface optical phonon scattering limited electron mobility in N-polar GaN devices", K. Ghosh, and U. Singisetti, Journal of Applied Physics, 117, 065703 (2015). [PDF ]
  32. "RF performance and avalanche breakdown analysis of InN tunnel FETs", K. Ghosh, and U. Singisetti, IEEE Transactions on Electron Devices, vol.61, no.10, pp.3405-3410, Oct. 2014. [PDF ]
  33. "High-performance N-polar GaN enhancement-mode device technology", U. Singisetti, M. H. Wong, U. K. Mishra", Semiconductor Science and Technology, vol. 28, no. 7, p. 074006, 2013. [PDF ]
  34. "N-polar GaN epitaxy and high electron mobility transistors", M. H. Wong, S. Keller, Nidhi, S. Dasgupta, D. Denninghoff, S. Kolluri, D. F. Brown, J. Lu, N. A. Fichtenbaum, E. Ahmadi, U. Singisetti, A. Chini, S. Rajan, S. P. DenBaars, J. S. Speck, and U. K. Mishra", Semiconductor Science and Technology, vol. 28, no. 7, p. 074009, 2013. [PDF ]
  35. "Anomalous output conductance in N-polar GaN based High Electron Mobility Transistors", M. H. Wong, U. Singisetti, J.Lu, J. S. Speck, U. K. Mishra", IEEE Transactions on Electron Devices, vol. 59, no. 11, pp. 2988-2995, 2012. [PDF ]
  36. "Interface roughness scattering in ultra-thin N-polar GaN quantum well channels", U. Singisetti, M. H. Wong, and U. K. Mishra", Applied Physics Letters, vol 101, no.1, pp. 012101-4, 2012. [PDF]
  37. "Enhancement-mode N-polar GaN MOS-HFET with 5-nm GaN channel, 510 mS/mm gm and 0.66 Ω-mm Ron", U.Singisetti, M. H. Wong, J. S. Speck, and U. K. Mishra, IEEE Electron Device Letters, vol. 33, no.1, pp.26-28, 2012.[PDF]
  38. "Enhancement-mode N-polar GaN MISFETs with current gain cutoff frequency (ft) of 120 GHz", U.Singisetti, M. H. Wong, S. Dasgupta, J. S. Speck, and U. K. Mishra, Applied Physics Express, vol. 4 no.2, p 024103, 2011. [PDF]
  39. "Enhancement-mode N-polar GaN MISFETs with self-aligned source/drain regrowth", U. Singisetti, M H Wong, S. Dasgupta, Nidhi, B. L. Swenson, B. J. Thibeault, J. S. Speck and U. K. Mishra; IEEE Electron Device Letters, vol.32, no.2, pp.33-35, 2011. [PDF]
  40. "Self-aligned technology for N-polar GaN/Al(Ga)N MIS-HEMTs", Nidhi, S. Dasgupta, D. Brown, U. Singisetti, S. Keller, J. S. Speck and U. K. Mishra, IEEE Electron Device Letters, vol. 32, no.1, pp. 33-35, 2011 .
  41. "Ex-situ Ohmic contacts to n-InGaAs", A. Baraskar, M. A. Wistey, V. Jain, E. Lobisser, U. Singisetti, G. Burek, Y. J. Lee, B. J. Thibeault, A. C. Gossard, M. J. W. Rodwell, J. Vac. Sci. Tech. B, 28, C517, 2010.
  42. "In0.53Ga0.47As channel MOSFETs with self-aligned InAs Source/Drain formed by MEE regrowth"; U.Singisetti, M.A. Wistey, G.J. Burek, A.K. Baraskar, J. Cagnon, B.J. Thibeault, A.Gossard, S. Stemmer, M. Rodwell, E.Kim, B.Shin, P.C McIntyre; IEEE Electron Device Letters, Vol. 30, No. 11, pp 1128-1130,2009. [PDF]
  43. "III-V/Ge Channel Engineering for Future CMOS," M. Wistey, U. Singisetti, G. Burek, E. Kim, B. J. Thibeault, A. Nelson, J. Cagnon, Y. -J. Lee, S. R. Bank, S. Stemmer, P. C. McIntyre, A. C. Gossard, and M. J. Rodwell, ECS Trans. 19 (5), 361, 2009.
  44. "InGaAs channel MOSFET with novel self-aligned source/drain MBE regrowth technology"; U. Singisetti, M.A. Wistey, G.J. Burek, E. Arkun, Y.Sun, E.J. Kiwera, B. J. Thibeault, A.C. Gossard, C.Palmstrom, and M.J.W. Rodwell; physica solidi status (c); Vol. 6, No. 6, pp. 1394-1398, 2009. [PDF]
  45. "Ultralow resistance, nonalloyed Ohmic contacts to n-InGaAs," A. Baraskar, M. A. Wistey, V. Jain, U. Singisetti, G. Burek, B. J.Thibeault, Y. J. Lee, A. C. Gossard and M. J. W. Rodwell, J. Vac. Sci. Tech. B, 27, 2036, 2009.
  46. "Height-selective etching for regrowth of self-aligned contacts using MBE", G.J. Burek, M.Wistey, U.Singisetti, A.Nelson, B.Thibeault, S.Bank,A.gossard, M.Rodwell; Journal of Crystal Growth; Vol 311, pp 1984-1987.
  47. "ErAs epitaxial Ohmic contacts to InGaAs/InP"; U.Singisetti, J. Zimmerman, M.A.Wistey, J.Cagnon, B.Thibeault, A. Gossard, S.Stemmer, M.Rodwell, S.R.Bank; Applied Physics Letters; Vol 94, pp 083505. [PDF]
  48. "Ultra-Low resistance in-situ Ohmic contacts to InGaAs/InP"; U.Singisetti, M.A.Wistey, J.Zimmerman, B.Thibeault, A.Gossard, M.Rodwell; Applied Physics Letters; Vol 93, pp183502. [PDF]
  49. "Collector-Pedestal InGaAs/InP DHBTs Fabricated in a Single-Growth, Triple-Implant Process", N. Parthasarathy, C. Kadow, Z. Griffith, U. Singisetti, M. J. Rodwell; IEEE Electron Device Letters, Vol 27 (5), pp 313-316, 2006.[PDF]
  50. "Two-dimensional electrical Characterization of ultrashallow Source/Drain Extensions for nanoscale MOSFETs"; U. Singisetti, M.R.McCartney, J.Li, P.S.Chakraborty, S.M.Goodnick, T.J.Thornton, M.N.Kozicki; Superlattices and Microstructures, Vol 34, pp 301-310, 2004.[PDF]
  51. "Electron Holographic Characterization of Nanoscale Charge Distribution for Ultra Shallow PN Junctions in Si", P.S. Chakraborty, M.R. McCartney, J. Li, C. Gopalan, U. Singisetti, S.M. Goodnick, T.J. Thornton, M.N. Kozicki; Physica E: Low-dimensional Systems and Nanostructures, Vol 19/1-2, pp 167-172, 2003.[PDF]

Conference Publications

  1. "710 V Breakdown Voltage in Field Plated Ga2O3 MOSFET", K. Zeng, A. Vaidya, and U. Singisetti, , IEEE DRC Tech Digest, 2018 Device Research Conference, June 25-28, 2018, University of California, Santa Barbara, USA.
  2. "Mixed-mode circuit simulation to characterize Ga2O3 MOSFET in different device Structures", I.H. Lee, A. Kumar, K. Zeng, U.Singisetti, and X. Yao, presented at the 5th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2017), Oct 30-Nov-1, 2017, Albuquerque, NM USA
  3. "Modeling and power loss evaluation of ultrawide band gap Ga2O3 device for high power applications,", I. Lee, A. Kumar, K. Zeng, U. Singisetti and X. Yao, 2017 IEEE Energy Conversion Congress and Exposition (ECCE), Cincinnati, OH, 2017, pp. 4377-4382. doi: 10.1109/ECCE.2017.8096753
  4. "Hot Electrons in Layered Materials – A First Principles Perspective", K. Ghosh, U.Singisetti, presented at The 20th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, Buffalo, NY from July 17-21, 2017.
  5. "Electrical Evaluation of Epitaxial Chromia Thin Films Grown for Spintronic Device Application", C. P. Kwan, M. Street, A. Mahmood, W. Echtenkamp, J. Nathawat, N. Arabchigavkani, M. Zhao, , B. Barut, S. Yin, M. Randle, U. Singisetti, Ch. Binek and J. P. Bird, presented at The 20th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, Buffalo, NY from July 17-21, 2017.
  6. "Temperature Dependent Characterization of Ga2O3 MOSFETs with Spin-on-Glass Source/Drain Doping", K. Zeng, and U. Singisetti, , IEEE DRC Tech Digest, 2017 Device Research Conference, June 25-28, 2017, University of Notre Dame, USA.
  7. "Anisotropy of Electron Transport in Monoclinic β-Ga2O3". K. Ghosh, and U. Singisetti, presented at the 2017 MRS Spring Meeting, April 17-21, 2017, Phoenix, AZ, USA.
  8. "High-field Transport in Low Symmetry β-Ga2O3 Crystal". K. Ghosh, and U. Singisetti, presented at the APS March Meeting, March 13-17, 2017, New Orleans, LA, USA.
  9. "Band Offset Characterization of Atomic Layer Deposited Al2O3 on m-plane GaN by X-ray Photoelectron Spectroscopy", Y. Jia, J. S. Wallace, E. Echeverria, J. A. Gardella Jr, and U. Singisetti, 2016 International Workshop on Nitride Semiconductors, Orlando, FL, USA, 2016.
  10. "Electrical Characterization of Atomic Layer Deposited SiO2/ β-Ga2O3 interface", K. Zeng, Y.Jia, and U. Singisetti, 2016 Lester Eastman Conference on High Performance Devices, August 2-6, 2016, Lehigh University, Bethlehem, PA, USA.
  11. "Depletion and Enhancement Mode β-Ga2O3 MOSFETs with ALD SiO2 gate and near 400 V Breakdown Voltage", K. Zeng, K. Sasaki, A. Kuramata, T.Masui, and U. Singisetti, presented at the 2016 Device Research Conference, June 19-22, University of Delaware, USA. [PDF]
  12. "Conductance spectroscopy study of interface states in ALD deposited SiO2 on β-Ga2O3", K. Zeng, and U. Singisetti, 1st International Workshop on Gallium Oxide and Related Materials, Kyoto University, Kyoto, Japan.
  13. "CMOS compatible integrated ferroelectric tunnel junctions (FTJ)", M. Abuwasib, H. Lee, P. Sharma, C-B. Eom, A. Gruverman and U. Singisetti, 2015 IEEE Device Research Conference, Ohio State University, Columbus, OH, USA. [PDF, Slides]
  14. "Band offset characterization of atomic layer deposited Al2O3 on m-plane (1100) InN", Y. Jia, J. Wallace, J. A. Gardella Jr, A. M. Dabiran and U. Singisetti , 57th Electronic Materials Conference (EMC), Ohio State University, Columbus, OH, USA.
  15. "Calculation of electron impact ionization co-efficient in β-Ga2O3", K. Ghosh, and U. Singisetti, 2014 IEEE Device Research Conference, Santa Barbara, USA.
  16. "Electrical properties of atomic layer deposited high-k dielectrics on InN ", Y. Jia, and U. Singisetti, 2013 IEEE International Semiconductor Device Research Symposium (ISDRS-2013), Hyatt Regency Bethesda,Maryland, USA.
  17. "Enhancment-mode N-polar GaN devices", U. Singisetti, 2013 Materials Research Symposium (MRS) Fall Meeting, Boston, USA.
  18. "A 50 nm gate length InN tri-gate FET design with gm of 1.07 mS/um and ft of 495 GHz ", K. Ghosh, and U. Singisetti, 2013 IEEE Device Research Conference, University of Notre Dame, USA.
  19. "Vertically scaled 5 nm GaN channel Enhancement-mode N-polar GaN MOS-HFET with 560 mS/mm gm and 0.76 Ω-mm Ron", U. Singisetti, M. H. Wong, J. S. Speck, U. K. Mishra", Late News 2011 Device Research Conference, Santa Barbara, USA. [ Slides]
  20. "Anomalous drain conductance in N-face GaN MISHEMTs", M. H. Wong, U. Singisetti, J.Li, J. S. Speck, U. K. Mishra", 2011 Device Research Conference, Santa Barbara, USA.
  21. "Interface roughness scattering in ultra-thin GaN channels in N-polar enhancement-mode GaN MISFETs", U. Singisetti, M H Wong, J. S. Speck, and U. K. Mishra, 2011 International Symposium on Compound Semiconductors, Berlin, 2011. [PDF, Slides]
  22. "100 nm gate length self-aligned E-mode N-polar GaN MISFETs with current gain cutoff frequency (ft ) of 120 GHz", U. Singisetti, M H Wong, S. Dasgupta, Nidhi, B. L. Swenson, B. J. Thibeault, J. S. Speck and U. K. Mishra, 2010 International Workshop on Nitride Semiconductors, Tampa, 2010.
  23. "Scalable E-mode N-polar GaN MISFET devices and process with self-aligned source/drain regrowth", U Singisetti, M. H. Wong, S. Dasgupta, Nidhi, B. L. Swenson, B. J. Thibeault, J. S. Speck and U. K. Mishra, 2010 Device Research Conference, University of Notre Dame, South Bend, IN, USA. [PDF, Slides]
  24. "III-V MOSFETs: Scaling Laws, Scaling Limits, Fabrication Processes", M. J. W. Rodwell, U. Singisetti, M.Wistey, G. J. Burek, A. Carter, A. Baraskar, J. Law, B. J. Thibeault, Eun Ji Kim, B. Shin, Yong-ju Lee, S. Steiger, S. Lee, H. Ryu, Y. Tan, G. Hegde, L. Wang, E. Chagarov, A.C. Gossard, W. Frensley, A. Kummel, C. Palmstrøm, Paul C McIntyre, T. Boykin, G. Klimek, P. Asbeck, IEEE 22nd International Conference on Indium Phosphide and Related Materials May 31-June 4, 2010, Kagawa, Japan.
  25. "A Self-Aligned Epitaxial Regrowth Process for Sub-100-nm III-V FETs" M. J.W. Rodwell, A. D. Carter, G. J. Burek, M. A. Wistey, B. J. Thibeault, A. Baraskar, U. Singisetti, Byungha Shin, E. Kim, J. Cagnon, Y.-J. Lee, S. Stemmer, P. C. McIntyre, A. C. Gossard, C. Palmstrom, D. Wang, B. Yue, P. Asbeck, Y. Taur, 2010 MRS Spring Meeting- April 5-9, 2010, San Francisco.
  26. "THz Transistors: Design and Process Technologies" M. J.W. Rodwell, V. Jain, E. Lobisser, A. Baraskar, M. A. Wistey, U. Singisetti, G. J. Burek, B. J. Thibeault, A. C. Gossard, E. J Kim, P. C. McIntyre, B. Yu, P. Asbeck, Y. Taur, 2010 Government Microcircuit Applications and Critical Technology Conference, March 22-25, 2010, Reno, NV.
  27. "In0.53Ga0.47As MOSFETs with 5 nm channel and self-aligned InAs source/drain by MBE regrowth", U.Singisetti, M.A. Wistey, G.J. Burek, A.K. Baraskar, J. Cagnon, B.J. Thibeault, A.Gossard, S. Stemmer, M. Rodwell, E.Kim, B.Shin, P.C McIntyre, WOCSEMMAD 2010.
  28. "Ex-situ Ohmic Contacts to n-InGaAs Prepared by Atomic Hydrogen Cleaning", A. Baraskar, M.A. Wistey, E. Lobisser, V. Jain, U. Singisetti, G. Burek, Y.J. Lee, B. Thibeault, A. Gossard, M. Rodwell, 37th Conference on the Physics and Chemistry of Surfaces and Interfaces, Jan. 10-14, 2010, Santa Fe, New Mexico, USA.
  29. "Sub-100-nm Process Technologies For THz InP HBTs & MOSFETs" M. J.W. Rodwell, E. Lobisser, V. Jain, A. Baraskar, M. A. Wistey, U. Singisetti, G. J. Burek, B. J. Thibeault, A. C. Gossard, E. Kim, P. C. McIntyre, B. Yu, P. Asbeck, Y. Taur, 2009 International Workshop on Terahertz Technology, Osaka, Japan, Nov. 30 -Dec. 3, 2009.
  30. "Enhancement Mode In0.53Ga0.47As MOSFET with Self-Aligned Epitaxial Source/Drain", U.Singisetti, M.A. Wistey, G.J. Burek, A.K. Baraskar, J. Cagnon, B.J. Thibeault, A.Gossard, S. Stemmer, M. Rodwell, E.Kim, B.Shin, P.C McIntyre; 2009 TECHCON, Renaissance Hotel, Austin, TX, September 14-15, 2009.
  31. "Process Technologies for Sub-100-nm InP HBTs and InGaAs MOSFETs", M. J. W. Rodwell, M. A. Wistey, U. Singisetti, G. J. Burek, E. Kim, A. Baraskar, J. Cagnon, Y.-J. Lee, S. Stemmer, P. C. McIntyre, A.C. Gossard, B. Yu, P. Asbeck, Y. Taur, 8th Topical Workshop on Heterostructure Microelectronics (TWHM 2009), Nagano, Japan, Aug. 2009.
  32. "Improved Regrowth of Self-Aligned Ohmic Contacts for III-V FETs", M.A. Wistey, A.K. Baraskar, U. Singisetti, B. Shin, E. Kim, G.J. Burek, P.C. Mcintyre, M.J.W. Rodwell, and A.C. Gossard, 26th North American Molecular Beam Epitaxy Conference (NAMBE 2009), Princeton, New Jersey, August 2009.
  33. "0.37 mS/um InGaAs MOSFET with 5 nm Channel and self-aligned Source/Drain regrowth"; U.Singisetti, M.A. Wistey, G.J. Burek, A.K. Baraskar, J. Cagnon, B.J. Thibeault, A.Gossard, S. Stemmer, M. Rodwell, E.Kim, B.Shin, P.C McIntyre; 2009 Device Research Conference, Pennsylvania State University, College Park,PA,USA. [PDF, Slides]
  34. "Improved Migration Enhanced Epitaxy for Self-aligned InGaAs Devices"; M.Wistey, U.Singisetti, A. Baraskar, G.Burek, M.Rodwell, A.Gossarsd; 2009 Electronic Materials Conference, Pennsylvania State University, PA,USA.
  35. "High Doping Effects on the In-Situ and Ex-Situ Ohmic Contacts to n-InGaAs", Ashish k. Baraskar, Mark A. Wistey, Vibhor Jain, Uttam Singisetti, Greg Burek, Brian J. Thibeault, Yong Ju Lee, Arthur C. Gossard, and Mark J. W. Rodwell, 2009 Electronic Materials Conference, Pennsylvania State University, PA,USA.
  36. "Ultra-low contact resistance for Self-aligned HEMT structures on N-polar GaN by MBE regrowth of InGaN-based contact layers"; Nidhi, S.Dasgupta, M.Hong, U.Singisetti, M.Wistey, M.Rodwell, U.Mishra; 2009 Electronic Materials Conference, Pennsylvania State University, PA,USA.
  37. "Enhancement Mode InGaAs MOSFET with self-aligned Epitaxial Source/Drain regrowth"; U.Singisetti, M.A. Wistey, G.J. Burek, A.K. Baraskar, J. Cagnon, B.J. Thibeault, A.Gossard, S. Stemmer, M. Rodwell, E.Kim, B.Shin, P.C McIntyre; Indium Phosphide and Related Materials Conference 2009, Newport Beach, CA, USA.
  38. "Effect of Surface Preparations on Contact Resistivity of TiW to Highly Doped n-InGaAs", V. Jain, A.K. Baraskar, M.A. Wistey, U. Singisetti, Z. Griffith, E. Lobisser, B. J. Thibeault, A.C. Gossard, M. J. W. Rodwell, Indium Phosphide and Related Materials Conference 2009, Newport Beach, CA, USA.
  39. "III-V/Ge Channel Engineering for Future CMOS"; M.A.Wistey, U.Singisetti, G.J. Burek, E.Kim, B.J. Thibeault, A.Nelson, J.Cagnon, Y.J.Lee, S.R. Bank, S.Stemmer, P.C. McIntyre, A.C. Gossard, M. Rodwell, presented at 215th ECS Meeting 2009, San Francisco, May, 2009.
  40. "Ultra low resistance, non-alloyed ohmic contacts to n-InGaAs" Ashish K. Baraskar, Mark A. Wistey, Vibhor Jain, U.Singisetti, G. Burek, B. J.Thibeault, Y. J. Lee, A. C. Gossard and M. J. W. Rodwell, Physics and Chemistry of Semiconductor Interfaces, January 2009, Santa Barbara.
  41. "InGaAs channel MOSFET with novel self-aligned source/drain MBE regrowth technology", U. Singisetti, M.A. Wistey, G.J. Burek, E. Arkun, Y.Sun, E.J. Kiwera, B. J. Thibeault, A.C. Gossard, C.Palmstrom, and M.J.W. Rodwell, International Symposium on Compound Semiconductors, Europa-Park, Freiburg, Germany, September 21 - 24, 2008.
  42. "Regrowth of Self-Aligned, Ultra Low Resistance Ohmic Contacts on InGaAs ", M.A. Wistey, G.J. Burek, U. Singisetti, A. Nelson, B.J. Thibeault, S.R. Bank, M.J.W. Rodwell, and A.C. Gossard, 5th International Conference on Molecular Beam Epitaxy August 3-8, 2008, University of British Columbia, Vancouver, Canada.
  43. "MBE Regrown Contacts for InGaAs Field Effect Transistors"; M.Wistey, U.Singisetti, G.Burek, J.Cagnon, S.Stemmer, M.Rodwell, A.Gossard, presented at 2008 Electronic Materials Conference. Santa Barbara,CA.
  44. [Invited] "Technology Development & Design for 22 nm InGaAs/InP-channel MOSFETs"; M. J. W. Rodwell, U. Singisetti, M. Wistey, G. Burek, A. Gossard, C. Palmstrom, E. Arkun, P. Simmonds, S. Stemmer, R. Engel-Herbert, Y. Hwang, Y. Zheng, P. Asbeck, Y. Taur, M. V. Fischetti, B. Yu, D. Wang, Y. Yuan, C. Sachs, A. Kummel, P. McIntyre, C. Van de Walle, and J. Harris, Indium Phosphide and Related Materials Conference 2008.
  45. "On the Feasibility of low-THz InP HBTs", Mark Rodwell, Z. Griffith, E. Lind, U. Singisetti, M. Wistey, A.C. Gossard, 2008 Government Microcircuit Applications and Circuit Technology Conference, March17-20, 2008 - Las Vegas, NV.
  46. "On the Feasibility of few-THz Bipolar Transistors", M Rodwell, E. Lind, Z. Griffith, A.M. Crook, S.R. Bank, U. Singisetti, M. Wistey, G. Burek, A.C. Gossard, 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2007. Sept. 30 2007-Oct. 2 2007 Page(s):17 - 21, Boston, Mass.
  47. "Ultra-Low Resistance Ohmic contacts to InGaAs/InP"; U. Singisetti, A. M. Crook, J.D. Zimmerman, M. A. Wistey, A.C. Gossard, and M. J. Rodwell; 2007 Device Research Conference, University of Notre Dame, South Bend, IN, USA, Jun 2007. [Slides]
  48. "Frequency Limits of InP-based Integrated Circuits", Mark Rodwell, E. Lind, Z. Griffith, S. R. Bank, A. M. Crook, U. Singisetti, M. Wistey, G. Burek, A.C. Gossard, IEEE/LEOS Int. Conf. Indium Phosphide and Related Materials, Matsue, Japan, May 14-18, 2007.
  49. "MBE growth of ErAs/In(Ga)As epitaxial ultra low resistance ohmic contacts"; S.R. Bank, U. Singisetti, A. M. Crook, J.D. Zimmerman, J. M. O. Zide, A.C. Gossard, and M. J. Rodwell; presented at the 2006 North American MBE Conference, Durham, NC, USA, Oct 2006.
  50. "Developing Bipolar Transistors for Sub-mm-Wave Amplifiers and Next-Generation (300 GHz) Digital Circuits", Mark Rodwell, Z. Griffith, N. Parthasarathy, E. Lind, C. Sheldon, S. R. Bank, U. Singisetti, M. Urteaga, K. Shinohara, R. Pierson, P. Rowell, Device Research Conference, June 2006, State College PA.
  51. "Frequency Limits of Bipolar Integrated Circuits", M.Rodwell, Z.Griffith, N.Parthasarathy, U.Singisetti, V.Paidi, M.Urteaga, R.Pierson, B.Brar; IEEE MTT-S International Microwave Symposium Digest, 2006. pp 329-332.
  52. "Selectively implanted subcollector DHBTs and implanted pedestal-subcollector InP DHBTs"; N. Parthasarathy, Z. Griffith, C. Kadow, U. Singisetti, M. Urteaga, K. Shinohara, B. Brar and M. J. Rodwell; presented at the Indium Phosphide and Related Materials Conference, Princeton University, USA, May 2006.
  53. "InP HBT Digital ICs and MMICs in the 140-220 GHz band", Mark Rodwell, Z. Griffith, V. Paidi, N. Parthasarathy, C. Sheldon, U. Singisetti, M. Urteaga , R. Pierson, P. Rowell, B. Brar, 2005 Joint 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, September 19-23, 2005 Williamsburg, Virginia USA.
  54. "Two-dimensional electrical Characterization of ultrashallow Source/Drain Extensions for nanoscale MOSFETs", U Singisetti, M. R. McCartney, J. Li, P. S. Chakraborty, S. M.Goodnick, T. J. Thornton, M. N. Kozicki; Sixth International Conference on New Phenomena in Mesoscopic Systems and Fourth International Conference on Surfaces and Interfaces of Mesoscopic Devices, Maui, Hawaii, USA, December 2003.
  55. "Electron Holographic Characterization of Nanoscale Charge Distribution for Ultra Shallow PN Junctions in Si", P. S. Chakraborty, M. R. McCartney, J. Li, C. Gopalan, U. Singisetti, S. M. Goodnick, T.J.Thornton, M.N.Kozicki; The Fourth International Symposium on Nanostructures and Mesoscopic Systems, Tempe, February 17-21, 2003.
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