Oxide Materials For Semiconductor Optoelectronics

Jamie Phillips

Solid State Electronics Laboratory

Department of Electrical Engineering and Computer Science

The University of Michigan, Ann Arbor, Michigan

Email: jphilli@umich.edu


In the semiconductor device community, the word “oxide” has typically referred to one material: SiO2 (or another oxide for a gate dielectric in a FET). Today, there are a variety of efforts to incorporate unique oxide materials in semiconductor devices to improve materials integration, enhance device performance, or to introduce new functionality to existing electronic and optoelectronic devices. Oxide materials can possess functionalities including ferroelectric, piezoelectric, pyroelectric, and electro-optic properties. In this seminar, two distinct projects will be presented that utilize oxide materials for semiconductor optoelectronics. The first is the application of the perovskite oxide BaTiO3 to GaAs optoelectronics in the goal of achieving monolithic optoelectronic integrated circuits (OEIC). BaTiO3 possesses a strong electro-optic effect and transparency in the visible and infrared that potentially may be used to integrate modulator and waveguide devices monolithically with GaAs-based lasers and photodetectors for a complete OEIC. The status and challenges of realizing this goal will be presented. The second project is the development of ZnO-based materials for wide-bandgap optoelectronic devices. ZnO is a wide-bandgap II-VI semiconductor that may offer tremendous potential for offering optical sources and detectors in the visible and ultraviolet region in combination with alloys of MgZnO and CdZnO. ZnO-based semiconductors offer the potential to surpass GaN-based materials due to their strong excitonic binding energy (60meV for ZnO, 25meV for GaN), availability of native substrates, and improved manufacturability. The growth and properties of ZnO-based materials will be presented and discussed with respect to application in optoelectronic devices. =